Product Description:
The next experiment consisted of using the LiNbO3 wafer as a transducer bonded on another LiNbO3 wafer
used as the HBAR substrate. In this case, we have achieved a well-controlled LiNbO3 lapping and polishing step down to 34 Gm whereas the wafer was still 350 Gm thick. Resonators have been found here exhibiting Q-factors in the vicinity of 53000 at 1.5 GHz, yielding Q.f products of about 8.1×1013 with a coupling factor of Ks 2 = 0.006% due the thickness of the transducer.
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Contact Name: Jingzheng
Company Name: Jinan Jingzheng Electronics Co., Ltd.
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Jinan High-tech Zone, Jinan 250101, P. R. China
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Business focus: Single Crystal Lithium Niobate Thin Film, Lithium Niobate Thin Film, Thin Lithium Tantalite, Linbo3 Film, Lnoi
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