Product Description:Gallium Arsenide (GaAs) Wafer Si-Doped 2” 3” 4”
Conduct Type S-C-N, VGF growth, EPI-Ready
Diameter
50.7+/- 0.2, 76.2+/-0.3, 100+/-0.3
Orientation (100)0+/-0.50
Thickness 350+/-25um, 625+/-25um
Primary Flat Length 16+/-1mm, 22+/-2 mm
Secondary Flat Length 8+/-1mm, 16+/-2mm
CC 0.4E18-4E18 /cm3, 1E17-2.0E17
Resistivity 0.8x10-3-9x10-3, 0.05-0.005 Ohm.cm
Mobility >1000 cm2/v.s, 2000-3500 cm2/v.s
EPD 1000/cm2, 10, 000/cm2 max
Surface P/E, TTV 10um max, Particle Count <50 (>0.3µm)
Single wafer packing, carton box outside
Company Contact:
Contact Name: Sheldon
Company Name: Sichuan Western Minmetals Co., Ltd
Email:
Tel: (86) 28 8518 7251
Fax: (86) 28 8518 4110
Street Address: C-5-C, No.2
Tongzilin North Road, Chengdu,
Sichuan, China 610041
Website:
http://www.matltech.com
Member name: swmc1234
Country:
China
Member Since: 02 September 2010
Total Leads:
40 swmc1234 Import Export Business Leads
Business focus: 5n-7n Purity Antimony, Tellurium, Arsenic, Cadmium, Gallium, Indium, Bismuth, Zinc, Tin, Phosphorus, Sulfur, Selenium, Tellurium Oxide, Antimony Oxide
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