Product Description:
Manufacturer Part Number: IRF4905STRLPBF IR HEXFET Power MOSFET, 55 V, 3.8 W, 180 nC, 42A, D2PAK-3
Description:
The
IRF4905STRLPBF is a HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF4905STRLPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRF4905STRLPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ -10V: -74 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ -10V: -52 A; (3)IDM Pulsed Drain Current: -260 A; (4)PD @TA = 25℃ Power Dissipation: 3.8 W; (5)PD @TC = 25℃ Power Dissipation: 200 W; (6)Linear Derating Factor: 1.3 W/℃; (7)VGS Gate-to-Source Voltage: ±20 V; (8)EAS Single Pulse Avalanche Energy: 930 mJ; (9)IAR Avalanche Current: -38 A; (10)EAR Repetitive Avalanche Energy: 20 mJ; (11)dv/dt Peak Diode Recovery dv/dt: -5.0 V/ns; (12)TJ Operating Junction and TSTG Storage Temperature Range: -55 to + 175 ℃; (13)Soldering Temperature, for 10 seconds: 300 (1.6mm from case ) ℃.
Package Case: New and Original Package
Date Code: 2013+ Rohs
Lead Time / Delivery Time: IN STOCK, SHIP WITHIN 1-3 DAY
RoHS Status: Lead free / RoHS Compliant
Distributor/ Supplier: ICBOND ELECTRONICS LIMITED
Company Contact:
Contact Name: Paul
Company Name: Icbond Electronics Limited
Email: Icbond Electronics Limited
Tel: 00852-28150191
Fax:
Street Address: Unit D, 11/f., Wing
Tat Comm. Bldg., 97 Bonham Strand
East, Sheung Wan
Hk, Hk 999077
Hong Kong
Member name: IcbondElectronicsLimite
Country:
Hong Kong
Member Since: 05 August 2013
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525 IcbondElectronicsLimite Import Export Business Leads
Business focus: Electronic Components, Integrated Circuits, Ic Chips, Semiconductors, Diodes, Capacitors
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