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K9f1g08u0a Samsung Semiconductor, 128m X 8 Bit Memory, Tsop
Posted at: Offers to Sell and Export | Posted on: Tuesday 25 September 2012 5:29 am | Poster last visit: Friday 26 July 2013 |
Product Description:
Excellent Integrated System LIMITED (EIS LIMITED), Established in 1991, is a professional independent
stocking distributor of electronic components and specialize in buying the EXCESS STOCK from the original equipment manufacturers (OEMs), Contract equipment manufacturers (CEMs), and many other factories. EIS has gained good experiences in Excess Inventory Management through its development over 20 years and has become the reliable partner for the domestic and foreign OEM manufacturers. If any inquiry and question, please email us:
Part number k9f1g08u0a
BRAND Samsung semiconductor [SAMSUNG]
Packaging tsop
Date code 10+
Price 1~5usd
Summary 128M x 8 Bit memory, TSOP, 5 mA, -0.6 to + 4.6V, CMOS Floating-Gate Technology
Description as follow:
The K9F1G08U0A is a 128M x 8 Bit memory organized as 65, 536 rows(pages) by 2112x8 columns. Spare 64 columns are located from column address of 2048~2111. A 2112-byte data register and a 2112-byte cache register are serially connected to each other. The serially connected register of the K9F1G08U0A is connected to memory cell arrays for accommodating data transfer between the I/O buffers and memory cells during page read and page program operations. The memory array is made up of 32 cells that are serially connected to form a NAND structure. Each of the 32 cells resides in a different page. A block consists of two NAND structured strings. A NAND structure of the K9F1G08U0A consists of 32 cells. Total 1081344 NAND cells reside in a block. The program and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory array consists of 1024 separately erasable 128K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the K9F1G08U0A.
Parametrics
K9F1G08U0A absolute maximum ratings: (1)VIN/OUT -0.6 to + 4.6V; (2)VCC -0.6 to + 4.6; (3)TBIAS -10 to +125 ℃; (4)TSTG -65 to +150 ℃; (5)Ios 5 mA.
Features
K9F1G08U0A features: (1)Fast Write Cycle Time: Program time: 300ms(Typ.); Block Erase Time: 2ms(Typ.); (2)Command/Address/Data Multiplexed I/O Port; (3)Hardware Data Protection: Program/Erase Lockout During Power Transitions; (4)Reliable CMOS Floating-Gate Technology; Endurance: 100K Program/Erase Cycles; Data Retention: 10 Years; (5)Command Register Operation; (6)Cache Program Operation for High Performance Program; (7)Intelligent Copy-Back Operation; (8)Unique ID for Copyright Protection.
Diagrams
Company Contact:
Contact Name: John
Company Name: Excellent Integrated System Limited (eis Limited)
Email:
Tel: 00852-30777742
Fax: 00852-30777843
Street Address: Rm 906, Workingberg
Comm Bldg, 41-47 Marble Rd, Hong Kong
Member name: EISLIMITED
Country:
Hong Kong
Member Since: 29 August 2012
Total Leads: 537 EISLIMITED Import Export Business Leads
Business focus: Electronic Components, Active Component, Integrated Circuit, Semiconductor, Chips
Chat:
Verify: Safe Import Export Tips
stocking distributor of electronic components and specialize in buying the EXCESS STOCK from the original equipment manufacturers (OEMs), Contract equipment manufacturers (CEMs), and many other factories. EIS has gained good experiences in Excess Inventory Management through its development over 20 years and has become the reliable partner for the domestic and foreign OEM manufacturers. If any inquiry and question, please email us:
Part number k9f1g08u0a
BRAND Samsung semiconductor [SAMSUNG]
Packaging tsop
Date code 10+
Price 1~5usd
Summary 128M x 8 Bit memory, TSOP, 5 mA, -0.6 to + 4.6V, CMOS Floating-Gate Technology
Description as follow:
The K9F1G08U0A is a 128M x 8 Bit memory organized as 65, 536 rows(pages) by 2112x8 columns. Spare 64 columns are located from column address of 2048~2111. A 2112-byte data register and a 2112-byte cache register are serially connected to each other. The serially connected register of the K9F1G08U0A is connected to memory cell arrays for accommodating data transfer between the I/O buffers and memory cells during page read and page program operations. The memory array is made up of 32 cells that are serially connected to form a NAND structure. Each of the 32 cells resides in a different page. A block consists of two NAND structured strings. A NAND structure of the K9F1G08U0A consists of 32 cells. Total 1081344 NAND cells reside in a block. The program and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory array consists of 1024 separately erasable 128K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the K9F1G08U0A.
Parametrics
K9F1G08U0A absolute maximum ratings: (1)VIN/OUT -0.6 to + 4.6V; (2)VCC -0.6 to + 4.6; (3)TBIAS -10 to +125 ℃; (4)TSTG -65 to +150 ℃; (5)Ios 5 mA.
Features
K9F1G08U0A features: (1)Fast Write Cycle Time: Program time: 300ms(Typ.); Block Erase Time: 2ms(Typ.); (2)Command/Address/Data Multiplexed I/O Port; (3)Hardware Data Protection: Program/Erase Lockout During Power Transitions; (4)Reliable CMOS Floating-Gate Technology; Endurance: 100K Program/Erase Cycles; Data Retention: 10 Years; (5)Command Register Operation; (6)Cache Program Operation for High Performance Program; (7)Intelligent Copy-Back Operation; (8)Unique ID for Copyright Protection.
Diagrams
Company Contact:
Contact Name: John
Company Name: Excellent Integrated System Limited (eis Limited)
Email:
Tel: 00852-30777742
Fax: 00852-30777843
Street Address: Rm 906, Workingberg
Comm Bldg, 41-47 Marble Rd, Hong Kong
Member name: EISLIMITED
Country:
Hong KongMember Since: 29 August 2012
Total Leads: 537 EISLIMITED Import Export Business Leads
Business focus: Electronic Components, Active Component, Integrated Circuit, Semiconductor, Chips
Chat:
Verify: Safe Import Export Tips
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