Product Description:
Manufacturer Part Number: MT47H16M16BG-3:B Micron DDR2 SDRAM, BGA
Description:
The MT47H16M16BG-3:B
is a DDR2 SDRAM. It uses a double data rate architecture to achieve high-speed operation. The architecture of the MT47H16M16BG-3:B is essentially a 4n-prefetch architecture, with an interface designed to transfer two data words per clock cycle at the I/O balls. A single read or write access for the MT47H16M16BG-3:B effectively consists of a single 4n-bit-wide, one-clock-cycle data transfer at the internal DRAM core and four corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O balls.
Parametrics
MT47H16M16BG-3:B absolute maximum ratings: (1)VDD supply voltage relative to VSS: VDD: –1.0 to 2.3 V; (2)VDDQ supply voltage relative to VSSQ: VDDQ: –0.5 to 2.3 V; (3)VDDL supply voltage relative to VSSL: VDDL: –0.5 to 2.3 V; (4)Voltage on any ball relative to VSS: VIN, VOUT: –0.5 to 2.3 V; (5)Input leakage current; any input 0V ≤ VIN ≤ VDD; all other balls not under test = 0V: II: –5 to 5 μA; (6)Output leakage current; 0V ≤ VOUT ≤ VDDQ; DQ and ODT disabled: IOZ: –5 to 5 μA; (7)VREF leakage current; VREF = valid VREF level: IVREF: –2 to 2 μA.
Package Case: New and Original Package
Date Code: 2013+ Rohs
Lead Time / Delivery Time: IN STOCK, SHIP WITHIN 1-3 DAY
RoHS Status: Lead free / RoHS Compliant
Distributor/ Supplier: ICBOND ELECTRONICS LIMITED
Company Contact:

Contact Name: Paul
Company Name: Icbond Electronics Limited
Email: Icbond Electronics Limited
Tel: 00852-28150191
Fax:
Street Address: Unit D, 11/f., Wing
Tat Comm. Bldg., 97 Bonham Strand
East, Sheung Wan
Hk, Hk 999077
Hong Kong
Member name: IcbondElectronicsLimite
Country:

Hong Kong
Member Since: 05 August 2013
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