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Sell Ddb6u104n16rr Infineon Electronic, Diode Module With Chopper-igbt
Posted at: Offers to Sell and Export | Posted on: Friday 28 September 2012 9:41 am | Poster last visit: Friday 26 July 2013 |
Product Description:
Excellent Integrated System LIMITED (EIS LIMITED), Established in 1991, is a professional independent
stocking distributor of electronic components and specialize in buying the EXCESS STOCK from the original equipment manufacturers (OEMs), Contract equipment manufacturers (CEMs), and many other factories. EIS has gained good experiences in Excess Inventory Management through its development over 20 years and has become the reliable partner for the domestic and foreign OEM manufacturers. If any inquiry and question, please email us:
Part number ddb6u104n16rr
BRAND Infineon
PACKAGING Module
Date code 10+
Price 1~5usd
Summary DiodeModule, 5mA, eupec, DDB6U104N16RR, Chopper-IGBT, 50 A, Infineon Technologies AG
Description as follow:
The DDB6U104N16RR is a Diode Module with Chopper-IGBT.
Parametrics
DDB6U104N16RR maximum rated values: (1)repetitive peak reverse voltage, Tvj = - 40℃ to Tvj max, VRRM for Rectifierdiode: 1600 V; (2)RMS forward current (per chip), IFRMSM for Rectifierdiode: 60 A; (3)output current, TC = 100℃, Id for Rectifierdiode: 105 A; (4)surge forward current, Tvj = Tvj max, tp = 10ms, IFSM for Rectifierdiode: 550 A; (5)I2t-value Tvj = Tvj max, tp = 10ms, I2t for Rectifierdiode: 1500 A2s; (6)collector-emitter voltage, VCES for IGBT: 1200 V; (7)DC-collector current, TC = 80℃, IC for IGBT: 50 A; (8)repetitive peak collektor current, tp = 1ms, ICRM for IGBT: 100 A; (9)total power dissipation, TC = 25℃, Ptot for IGBT: 350 W; (10)Gatgate-emitter peak voltage, VGE for IGBT: ± 20 V; (11)repetitive peak reverse voltage, VRRM for Fast diode: 1200 V; (12)DC forward current, TC = 80℃, IF for Fast diode: 25 A; (13)repetitive peak forward current, tp = 1ms, IFRM for Fast diode: 50 A; (14)insulation test voltage, f = 50Hz, t = 1min NTC connected to baseplate, VISOL for Modul: 2, 5 kV.
Features
DDB6U104N16RR specifications: (1)Type: Diode Module; (2)Mounting Style: Through Hole; (3)Package / Case: DDB6; (4)Gate Trigger Current: 5 mA; (5)Output Current: 50 A; (6)Standard Pack Qty: 500.
Diagrams
Company Contact:
Contact Name: John
Company Name: Excellent Integrated System Limited (eis Limited)
Email:
Tel: 00852-30777742
Fax: 00852-30777843
Street Address: Rm 906, Workingberg
Comm Bldg, 41-47 Marble Rd, Hong Kong
Member name: EISLIMITED
Country:
Hong Kong
Member Since: 29 August 2012
Total Leads: 537 EISLIMITED Import Export Business Leads
Business focus: Electronic Components, Active Component, Integrated Circuit, Semiconductor, Chips
Chat:
Verify: Safe Import Export Tips
stocking distributor of electronic components and specialize in buying the EXCESS STOCK from the original equipment manufacturers (OEMs), Contract equipment manufacturers (CEMs), and many other factories. EIS has gained good experiences in Excess Inventory Management through its development over 20 years and has become the reliable partner for the domestic and foreign OEM manufacturers. If any inquiry and question, please email us:
Part number ddb6u104n16rr
BRAND Infineon
PACKAGING Module
Date code 10+
Price 1~5usd
Summary DiodeModule, 5mA, eupec, DDB6U104N16RR, Chopper-IGBT, 50 A, Infineon Technologies AG
Description as follow:
The DDB6U104N16RR is a Diode Module with Chopper-IGBT.
Parametrics
DDB6U104N16RR maximum rated values: (1)repetitive peak reverse voltage, Tvj = - 40℃ to Tvj max, VRRM for Rectifierdiode: 1600 V; (2)RMS forward current (per chip), IFRMSM for Rectifierdiode: 60 A; (3)output current, TC = 100℃, Id for Rectifierdiode: 105 A; (4)surge forward current, Tvj = Tvj max, tp = 10ms, IFSM for Rectifierdiode: 550 A; (5)I2t-value Tvj = Tvj max, tp = 10ms, I2t for Rectifierdiode: 1500 A2s; (6)collector-emitter voltage, VCES for IGBT: 1200 V; (7)DC-collector current, TC = 80℃, IC for IGBT: 50 A; (8)repetitive peak collektor current, tp = 1ms, ICRM for IGBT: 100 A; (9)total power dissipation, TC = 25℃, Ptot for IGBT: 350 W; (10)Gatgate-emitter peak voltage, VGE for IGBT: ± 20 V; (11)repetitive peak reverse voltage, VRRM for Fast diode: 1200 V; (12)DC forward current, TC = 80℃, IF for Fast diode: 25 A; (13)repetitive peak forward current, tp = 1ms, IFRM for Fast diode: 50 A; (14)insulation test voltage, f = 50Hz, t = 1min NTC connected to baseplate, VISOL for Modul: 2, 5 kV.
Features
DDB6U104N16RR specifications: (1)Type: Diode Module; (2)Mounting Style: Through Hole; (3)Package / Case: DDB6; (4)Gate Trigger Current: 5 mA; (5)Output Current: 50 A; (6)Standard Pack Qty: 500.
Diagrams
Company Contact:
Contact Name: John
Company Name: Excellent Integrated System Limited (eis Limited)
Email:
Tel: 00852-30777742
Fax: 00852-30777843
Street Address: Rm 906, Workingberg
Comm Bldg, 41-47 Marble Rd, Hong Kong
Member name: EISLIMITED
Country:
Hong KongMember Since: 29 August 2012
Total Leads: 537 EISLIMITED Import Export Business Leads
Business focus: Electronic Components, Active Component, Integrated Circuit, Semiconductor, Chips
Chat:
Verify: Safe Import Export Tips
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