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Sell P11nk40z St Electronic, To-220, Zener-protected, Supermesh Power Mosfet
Posted at: Offers to Sell and Export | Posted on: Wednesday 26 September 2012 2:27 am | Poster last visit: Friday 26 July 2013 |
Product Description:
Excellent Integrated System LIMITED (EIS LIMITED), Established in 1991, is a professional independent
stocking distributor of electronic components and specialize in buying the EXCESS STOCK from the original equipment manufacturers (OEMs), Contract equipment manufacturers (CEMs), and many other factories. EIS has gained good experiences in Excess Inventory Management through its development over 20 years and has become the reliable partner for the domestic and foreign OEM manufacturers. If any inquiry and question, please email us:
Part number p11nk40z
Brand st
Packaging to-220
Date code 11+
Price 0.1~0.5usd
Summary 400V, 0.49Ω, 9A, TO-220, Zener-Protected, SuperMESH Power MOSFET, 110 W
Description as follow:
The P11NK40Z is an N-channel 400V - 0.49Ω - 9A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH Power MOSFET. The P11NK40Z is obtained through an extreme optimization of ST’s well established strip-based PowerMES layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. The applications of the P11NK40Z include high current, high speed switching, ideal for off-line power supplies, adaptors and pfc and lighting.
Parametrics
P11NK40Z absolute maximum ratings: (1)VDS, Drain-source Voltage (VGS =0): 400 V; (2)VDGR, Drain-gate Voltage (RGS =20kΩ): 400 V; (3)VGS, Gate- source Voltage: ± 30 V; (4)ID, Drain Current (continuous) at TC = 25℃: 9 A; (5)ID, Drain Current (continuous) at TC = 100℃: 5.67 A; (6)IDM (·) Drain Current (pulsed): 36 A; (7)PTOT, Total Dissipation at TC = 25℃: 110 W; (8)Derating Factor: 0.88 W/℃; (9)VESD(G-S), Gate source ESD(HBM-C=100pF, R=1.5KΩ): 3500 V; (10)dv/dt, Peak Diode Recovery voltage slope: 4.5 V/ns; (11)Viso, Insulation Withstand Voltage (DC): 2500 V; (12)Tj, Operating Junction Temperature: -55 to 150℃; (13)Tstg, Storage Temperature: -55 to 150℃.
Features
P11NK40Z features: (1)typical RDS(on) = 0.49 Ω; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.
Diagrams
Company Contact:
Contact Name: John
Company Name: Excellent Integrated System Limited (eis Limited)
Email:
Tel: 00852-30777742
Fax: 00852-30777843
Street Address: Rm 906, Workingberg
Comm Bldg, 41-47 Marble Rd, Hong Kong
Member name: EISLIMITED
Country:
Hong Kong
Member Since: 29 August 2012
Total Leads: 537 EISLIMITED Import Export Business Leads
Business focus: Electronic Components, Active Component, Integrated Circuit, Semiconductor, Chips
Chat:
Verify: Safe Import Export Tips
stocking distributor of electronic components and specialize in buying the EXCESS STOCK from the original equipment manufacturers (OEMs), Contract equipment manufacturers (CEMs), and many other factories. EIS has gained good experiences in Excess Inventory Management through its development over 20 years and has become the reliable partner for the domestic and foreign OEM manufacturers. If any inquiry and question, please email us:
Part number p11nk40z
Brand st
Packaging to-220
Date code 11+
Price 0.1~0.5usd
Summary 400V, 0.49Ω, 9A, TO-220, Zener-Protected, SuperMESH Power MOSFET, 110 W
Description as follow:
The P11NK40Z is an N-channel 400V - 0.49Ω - 9A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH Power MOSFET. The P11NK40Z is obtained through an extreme optimization of ST’s well established strip-based PowerMES layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. The applications of the P11NK40Z include high current, high speed switching, ideal for off-line power supplies, adaptors and pfc and lighting.
Parametrics
P11NK40Z absolute maximum ratings: (1)VDS, Drain-source Voltage (VGS =0): 400 V; (2)VDGR, Drain-gate Voltage (RGS =20kΩ): 400 V; (3)VGS, Gate- source Voltage: ± 30 V; (4)ID, Drain Current (continuous) at TC = 25℃: 9 A; (5)ID, Drain Current (continuous) at TC = 100℃: 5.67 A; (6)IDM (·) Drain Current (pulsed): 36 A; (7)PTOT, Total Dissipation at TC = 25℃: 110 W; (8)Derating Factor: 0.88 W/℃; (9)VESD(G-S), Gate source ESD(HBM-C=100pF, R=1.5KΩ): 3500 V; (10)dv/dt, Peak Diode Recovery voltage slope: 4.5 V/ns; (11)Viso, Insulation Withstand Voltage (DC): 2500 V; (12)Tj, Operating Junction Temperature: -55 to 150℃; (13)Tstg, Storage Temperature: -55 to 150℃.
Features
P11NK40Z features: (1)typical RDS(on) = 0.49 Ω; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.
Diagrams
Company Contact:
Contact Name: John
Company Name: Excellent Integrated System Limited (eis Limited)
Email:
Tel: 00852-30777742
Fax: 00852-30777843
Street Address: Rm 906, Workingberg
Comm Bldg, 41-47 Marble Rd, Hong Kong
Member name: EISLIMITED
Country:
Hong KongMember Since: 29 August 2012
Total Leads: 537 EISLIMITED Import Export Business Leads
Business focus: Electronic Components, Active Component, Integrated Circuit, Semiconductor, Chips
Chat:
Verify: Safe Import Export Tips
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