Product Description:
Part Number: SPB17N80C3 Infineon power transistor, TO-263, 670mJ
Description:
The SPB17N80C3 is a power
transistor. It is designed for Industrial application with high DC bulk voltage and switching application (active clamp forward topology).
Parametrics
SPB17N80C3 absolute maximum ratings: (1)continuous drain current, ID: 17A when Tc=25℃; 11A when Tc=100℃; (2)pulse drain current, ID, pulse: 51A when Tc=25℃; (3)avalanche energy, single pulse, EAS: 670mJ when ID=3.4A, VDD=50V; (4)avalanche current, repetitive, tAR, IAR: 17A; (5)MOSFET dv/dt ruggedness, dv/dt: 50V/ns when VDS=0 to 640V; (6)power dissipation, Ptot: 227W when Tc=25℃; (7)operating and storage temperature, Tj, Tstg: -55 to 150℃.
Features
SPB17N80C3 features: (1)new revolutionary high voltage technology; (2)Extreme dv/dt rated; (3)High peak current capability; (4)Qualified according to JEDE for target applications; (5)Pb-free lead plating; RoHS compliant; (6)Ultra low gate charge; (7)Ultra low effective capacitances.
Lead Time / Delivery Time: IN STOCK, SHIP WITHIN 1-3 DAY
Distributor/ Supplier: ICBOND ELECTRONICS LIMITED
Company Contact:
Contact Name: Paul
Company Name: Icbond Electronics Limited
Email: Icbond Electronics Limited
Tel: 00852-28150191
Fax:
Street Address: Unit D, 11/f., Wing
Tat Comm. Bldg., 97 Bonham Strand
East, Sheung Wan
Hk, Hk 999077
Hong Kong
Member name: IcbondElectronicsLimite
Country:
Hong Kong
Member Since: 05 August 2013
Total Leads:
525 IcbondElectronicsLimite Import Export Business Leads
Business focus: Electronic Components, Integrated Circuits, Ic Chips, Semiconductors, Diodes, Capacitors
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