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Stp7nk80z St Electronic, Zener-protected Supermesh Power Mosfet
Posted at: Offers to Sell and Export | Posted on: Tuesday 25 September 2012 3:20 am | Poster last visit: Friday 26 July 2013 |
Product Description:
Excellent Integrated System LIMITED (EIS LIMITED), Established in 1991, is a professional independent
stocking distributor of electronic components and specialize in buying the EXCESS STOCK from the original equipment manufacturers (OEMs), Contract equipment manufacturers (CEMs), and many other factories. EIS has gained good experiences in Excess Inventory Management through its development over 20 years and has become the reliable partner for the domestic and foreign OEM manufacturers. If any inquiry and question, please email us:
Part number stp7nk80z
Brand st
Packaging to220
Date code 11+
Price 0.1~1usd
Summary Zener-Protected SuperMESH Power MOSFET, 5.2A, TO-220, 800V, 1.5
Description as follow:
The STP7NK80Z is a Zener-Protected SuperMESH Power MOSFET. It is obtained through an extreme optimization of well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. The applications of the STP7NK80Z include: (1)high current, high speed switching; (2)smps for industrial application; (3)lighting (preheating).
Parametrics
STP7NK80Z absolute maixmum ratings: (1)VDS Drain-source Voltage (VGS = 0): 800 V; (2)VDGR Drain-gate Voltage (RGS = 20 kΩ): 800 V; (3)VGS Gate- source Voltage: ±30 V; (4)ID Drain Current (continuous) at TC = 25℃: 5.2 A; (5)ID Drain Current (continuous) at TC = 100℃: 3.3 A; (6)IDM Drain Current (pulsed): 20.8 A; (7)PTOT Total Dissipation at TC = 25℃: 125 W; Derating Factor: 1 W/℃; (8)VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ): 4000 V; (9)dv/dt (1) Peak Diode Recovery voltage slope: 4.5 V/ns; (10)Tj Operating Junction Temperature: -55 to 150 ℃; (11)Tstg Storage Temperature: -55 to 150 ℃.
Features
STP7NK80Z features: (1)typical rds(on) = 1.5 Ω; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.
Diagrams
Company Contact:
Contact Name: John
Company Name: Excellent Integrated System Limited (eis Limited)
Email:
Tel: 00852-30777742
Fax: 00852-30777843
Street Address: Rm 906, Workingberg
Comm Bldg, 41-47 Marble Rd, Hong Kong
Member name: EISLIMITED
Country:
Hong Kong
Member Since: 29 August 2012
Total Leads: 537 EISLIMITED Import Export Business Leads
Business focus: Electronic Components, Active Component, Integrated Circuit, Semiconductor, Chips
Chat:
Verify: Safe Import Export Tips
stocking distributor of electronic components and specialize in buying the EXCESS STOCK from the original equipment manufacturers (OEMs), Contract equipment manufacturers (CEMs), and many other factories. EIS has gained good experiences in Excess Inventory Management through its development over 20 years and has become the reliable partner for the domestic and foreign OEM manufacturers. If any inquiry and question, please email us:
Part number stp7nk80z
Brand st
Packaging to220
Date code 11+
Price 0.1~1usd
Summary Zener-Protected SuperMESH Power MOSFET, 5.2A, TO-220, 800V, 1.5
Description as follow:
The STP7NK80Z is a Zener-Protected SuperMESH Power MOSFET. It is obtained through an extreme optimization of well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. The applications of the STP7NK80Z include: (1)high current, high speed switching; (2)smps for industrial application; (3)lighting (preheating).
Parametrics
STP7NK80Z absolute maixmum ratings: (1)VDS Drain-source Voltage (VGS = 0): 800 V; (2)VDGR Drain-gate Voltage (RGS = 20 kΩ): 800 V; (3)VGS Gate- source Voltage: ±30 V; (4)ID Drain Current (continuous) at TC = 25℃: 5.2 A; (5)ID Drain Current (continuous) at TC = 100℃: 3.3 A; (6)IDM Drain Current (pulsed): 20.8 A; (7)PTOT Total Dissipation at TC = 25℃: 125 W; Derating Factor: 1 W/℃; (8)VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ): 4000 V; (9)dv/dt (1) Peak Diode Recovery voltage slope: 4.5 V/ns; (10)Tj Operating Junction Temperature: -55 to 150 ℃; (11)Tstg Storage Temperature: -55 to 150 ℃.
Features
STP7NK80Z features: (1)typical rds(on) = 1.5 Ω; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.
Diagrams
Company Contact:
Contact Name: John
Company Name: Excellent Integrated System Limited (eis Limited)
Email:
Tel: 00852-30777742
Fax: 00852-30777843
Street Address: Rm 906, Workingberg
Comm Bldg, 41-47 Marble Rd, Hong Kong
Member name: EISLIMITED
Country:
Hong KongMember Since: 29 August 2012
Total Leads: 537 EISLIMITED Import Export Business Leads
Business focus: Electronic Components, Active Component, Integrated Circuit, Semiconductor, Chips
Chat:
Verify: Safe Import Export Tips
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